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FQB11P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQB11P06

60VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06

60VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06TM

P-ChannelQFETMOSFET-60V,-11.4A,175m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

P-ChannelQFET?MOSFET-60V,-9.4A,185m廓

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD11P06TM

P-channelEnhancementModePowerMOSFET

Features ?VDS=-60V,ID=-20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD11P06TM

P-ChannelQFET?MOSFET-60V,-9.4A,185m廓

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06TM

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
SOT-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
23+
SOT-252
20000
原裝正品 歡迎咨詢
 詢價
FAIRCHILD/仙童
23+
NA/
5750
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
FAIRCHILD/仙童
25+
SOT-252
2500
原裝正品,假一罰十!
 詢價
VISH
23+
原裝原封
8888
專做原裝正品,假一罰百!
 詢價
VISHAY/威世
23+
40000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
BannerEngineering
新
5
全新原裝 貨期兩周
 詢價
Banner Engineering
2022+
1
全新原裝 貨期兩周
 詢價
24+
LLP8
3629
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
 詢價
RENESAS/瑞薩
23+
SOP4
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
更多D11P06供應(yīng)商 更新時間2025-3-23 11:00:00

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