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HF-132

WidebandRF/PulseTransformer5-200MHz/1-100MHz

SIRENZA

SIRENZA MICRODEVICES

HLMP-132X

T-1(3mm)HighIntensityLEDLamps

Description ThisfamilyofT-1lampsisspeciallydesignedforapplicationsrequiringhigheron-axisintensitythanisachievablewithastandardlamp.Thelightgeneratedisfocusedtoanarrowbeamtoachievethiseffect. Features ?HighIntensity ?Choiceof3BrightColors HighEffici

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

HMC132

GaAsMMICHIGH-ISOLATION

GeneralDescription TheHMC132chipisafast,broadbandSPDTswitchfeaturinghigh(40dB)isolationovertheentireband,providedbyon-chipgroundvias.Theswitchisnon-reflectiveatboththeRF1andRF2ports.Anegativecontrolvoltageof0/-5Vdcto0/-7Vdccontrolsthechannelsele

Hittite

Hittite Microwave Corporation

HMCAA132G

HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA)

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

HMCAB132G

HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA)

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

HSPPAD132A

DigitalPressureSensor

ALPSALPS ELECTRIC CO.,LTD.

阿爾卑斯阿爾卑斯電氣株式會(huì)社

HVC132

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.5pFmax) ?Lowforwardresistance.(rf=2.0?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC132

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.5pFmax) ?Lowforwardresistance.(rf=2.0?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVC132

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=0.5pFmax) ●Lowforwardresistance.(rf=2.0Ωmax)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HVD132

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.5pFmax) ?Lowforwardresistance.(rf=2.0?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

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3200
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8890
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493
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