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ELKEV352FC

CoiltypeEMIFilters

PanasonicPanasonic Semiconductor

松下松下電器

FDN352

P-Channel30V(D-S)MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN352

P-Channel30V(D-S)MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN352AP

SingleP-Channel,PowerTrench

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■–1.3A,–30

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN352AP

SingleP-Channel,PowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN352AP

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FDN352AP

P-Channel30V(D-S)MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN352AP

P-Channel30V(D-S)MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN352AP-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FN-352-Z

Multi-stageEMIFilter

SCHAFFNER

Schaffner International Ltd

詳細(xì)參數(shù)

  • 型號(hào):

    DD352S

  • 制造商:

    WTE

  • 制造商全稱:

    Won-Top Electronics

  • 功能描述:

    35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE

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800
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19
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更多DD352S供應(yīng)商 更新時(shí)間2025-4-3 16:30:00