DG3157E中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FEATURES

? Direct cross to industry standard

SN74LVC1G3157, NC7SB3157, NLASB3157,

Pl5A3157, and STG3157

? Low switch on-resistance (6 ?)

? +1.65 V to +5.5 V single supply operation

? Powered-off protection

? Control logic inputs can go over V+ up to 5.5 V

? Low parasitic capacitance, 7 pF at switch off

? Break before make switching

? Latch-up performance exceeds 200 mA per JESD 78

? High ESD rating

- 7000 V human body model (JS-001)

- 1000 V charge device model (JS-002)

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

? Battery powered devices

? Consumer and computing

? Instrumentation

? Medical equipment

? Control and automation

DESCRIPTION

The DG3157E is a high speed single-pole double-throw

analog switch designed for +1.65 V to +5.5 V single power

rail operation.?

Fabricated with high density CMOS technology, the

DG3157E achieves low on-resistance, fast switching speed,

and high bandwidth while maintains low power

consumption.?

The DG3157E can handle both analog and digital signals

and permits signals with amplitudes of up to V+ to be

transmitted in either direction.?

When the select pin is low, B0 is connected to the output A

pin. When the select pin is high, B1 is connected to the

output A pin. The path that is open will have a high

impedance state with respect to the output. Break before

make switching performance is guaranteed. ?

A powered-off protection circuit is built into the switch to

prevent an abnormal current flow from COM pin to V+ during

the power-down condition. Each output pin can withstand

greater than 7 kV (human body model). ?

Operation temperature is specified from -40 °C to +85 °C.

The DG3157E is available in the compact SC-70-6L

package.