零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
DMP | 5mm BOX POLYESTER | DUBILIER dubilier | DUBILIER | |
表面貼裝型 P 通道 20 V 6.2A(Ta) 660mW(Ta) U-DFN2020-6(E 類(lèi)) 類(lèi)別:分立半導(dǎo)體產(chǎn)品|晶體管-FET,MOSFET-單FET,MOSFET RoHS狀態(tài):符合ROHS3規(guī)范 | DIODES | |||
12V P-CHANNEL ENHANCEMENT MODE MOSFET FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance | DIODES Diodes Incorporated | DIODES | ||
Marking:P1012US;Package:SO-8;12V P-CHANNEL ENHANCEMENT MODE MOSFET FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance | DIODES Diodes Incorporated | DIODES | ||
P-CHANNEL ENHANCEMENT MODE MOSFET Features LD-MOSTechnologywiththeLowestFigureofMerit: RDS(ON)=85mΩtoMinimizeOn-StateLosses Qg=3.7nCforUltra-FastSwitching VGS(TH)=-0.6VTyp.foraLowTurn-OnPotential CSPwithFootprint1.0mm×1.0mm Height=0.62mmforLowProfile ESD=3kVHBMProtectionofGate Tota | DIODES Diodes Incorporated | DIODES | ||
Marking:1W;Package:U-WLB1010-4;P-CHANNEL ENHANCEMENT MODE MOSFET Features LD-MOSTechnologywiththeLowestFigureofMerit: RDS(ON)=85mΩtoMinimizeOn-StateLosses Qg=3.7nCforUltra-FastSwitching VGS(TH)=-0.6VTyp.foraLowTurn-OnPotential CSPwithFootprint1.0mm×1.0mm Height=0.62mmforLowProfile ESD=3kVHBMProtectionofGate Tota | DIODES Diodes Incorporated | DIODES | ||
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features ?DualP-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltageVGS(TH) | DIODES Diodes Incorporated | DIODES | ||
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features ?DualP-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltageVGS(TH) | DIODES Diodes Incorporated | DIODES | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?VeryLowGateThresholdVoltageVGS(TH) | DIODES Diodes Incorporated | DIODES | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?VeryLowGateThresholdVoltageVGS(TH) | DIODES Diodes Incorporated | DIODES |
詳細(xì)參數(shù)
- 型號(hào):
DMP
- 制造商:
Alpha 3 Manufacturing
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
DISCRETE |
3000 |
DIO |
135000 |
詢(xún)價(jià) | |||
DIODES/美臺(tái) |
2022+ |
1600 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
DIODES |
19+ |
TO-252 |
69177 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢(xún)價(jià) | ||
NSC |
24+ |
DIP20 |
10000 |
全新原裝 |
詢(xún)價(jià) | ||
NSC |
23+ |
原裝原封 |
8888 |
專(zhuān)做原裝正品,假一罰百! |
詢(xún)價(jià) | ||
臺(tái)達(dá) |
22+ |
原廠原封 |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢(xún)價(jià) | ||
DIODES |
23+ |
SO-8 |
7750 |
全新原裝優(yōu)勢(shì) |
詢(xún)價(jià) | ||
正納電子熱銷(xiāo) |
23+ |
NA |
26094 |
原裝正品 可支持驗(yàn)貨,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢(xún)價(jià) | ||
DIODES/美臺(tái) |
2022+ |
SOT23 |
90000 |
原廠原盒現(xiàn)貨,年底清倉(cāng)大特價(jià)!送 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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相關(guān)庫(kù)存
更多- DMP0K24A180
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