首頁(yè)>DS1345YL-70>規(guī)格書(shū)詳情
DS1345YL-70集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料
| 廠商型號(hào) |
DS1345YL-70 |
| 參數(shù)屬性 | DS1345YL-70 封裝/外殼為34-LPM；包裝為管件；類別為集成電路（IC）的存儲(chǔ)器；產(chǎn)品描述：IC NVSRAM 1MBIT PARALLEL 34LPM |
| 功能描述 | 1024K Nonvolatile SRAM with Battery Monitor |
| 封裝外殼 | 34-LPM |
| 文件大小 |
219.44 Kbytes |
| 頁(yè)面數(shù)量 |
9 頁(yè) |
| 生產(chǎn)廠商 | Dallas Semiconductor |
| 企業(yè)簡(jiǎn)稱 |
Dallas【亞德諾】 |
| 中文名稱 | 亞德諾半導(dǎo)體官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-14 17:02:00 |
DS1345YL-70規(guī)格書(shū)詳情
DESCRIPTION
The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Additionally, the DS1345 devices have dedicated circuitry for monitoring the status of VCC and the status of the internal lithium battery.
FEATURES
? Built–in lithium battery provides more than 10 years of data retention
? Data is automatically protected during VCC power loss
? Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp–up
? Battery monitor checks remaining capacity daily
? Read and write access times as fast as 70 ns
? Unlimited write cycle endurance
? Typical standby current 50 μA
? Upgrade for 128K x 8 SRAM, EEPROM or Flash devices
? Lithium battery is electrically disconnected to retain freshness until power is applied for the first time
? Full ±10 VCC operating range (DS1345YL) or optional ±5 VCC operating range (DS1345BL)
? Low Profile Module package fits into standard 68–pin surface mountable PLCC sockets
? Optional industrial temperature range of –40°C to +85°C, designated IND
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
DS1345YL-70
- 制造商：
Analog Devices Inc./Maxim Integrated
- 類別：
集成電路（IC） > 存儲(chǔ)器
- 包裝：
管件
- 存儲(chǔ)器類型：
非易失
- 存儲(chǔ)器格式：
NVSRAM
- 技術(shù)：
NVSRAM（非易失性 SRAM）
- 存儲(chǔ)容量：
1Mb（128K x 8）
- 存儲(chǔ)器接口：
并聯(lián)
- 寫周期時(shí)間 - 字，頁(yè)：
70ns
- 電壓 - 供電：
4.5V ~ 5.5V
- 工作溫度：
0°C ~ 70°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
34-LPM
- 供應(yīng)商器件封裝：
34-LPM
- 描述：
IC NVSRAM 1MBIT PARALLEL 34LPM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MAXI |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
MAXIM |
23+ |
PWRCP |
8888 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
DallasSemiconductor |
22+23+ |
34-PCM |
20185 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
MAX |
24+ |
PCB |
3600 |
絕對(duì)原裝!現(xiàn)貨熱賣! |
詢價(jià) | ||
DALLAS |
18+ |
34-PCM |
27321 |
全新原裝現(xiàn)貨,可出樣品,可開(kāi)增值稅發(fā)票 |
詢價(jià) | ||
DALLAS |
23+ |
34-PCM |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢 |
詢價(jià) | ||
DALLAS |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
DALLAS |
23+ |
LPM |
65480 |
詢價(jià) | |||
Analog Devices Inc/Maxim Integ |
23+/24+ |
34-LPM |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價(jià) | ||
Analog Devices Inc./Maxim Inte |
24+ |
34-LPM |
9350 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) |
