DS28E01-100+集成電路（IC）的存儲器規(guī)格書PDF中文資料

DS28E01-100+屬于集成電路（IC）的存儲器。由亞德諾半導體技術有限公司制造生產的DS28E01-100+存儲器存儲器是集成電路上用作數據存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Features

● 1024 Bits of EEPROM Memory Partitioned into Four

Pages of 256 Bits

● On-Chip 512-Bit SHA-1 Engine to Compute 160-

Bit Message Authentication Codes (MACs) and to

Generate Secrets

● Dedicated 64-Bit Write-Only Secret with a Feature to

Extend the Secret Size to 320 Bits by Setting a 256-

Bit Page as Both Read and Write Protected

● 5-Byte Challenge Size for Read Authenticated Page

with Optional “Anonymous” Mode

● Write Access Requires Knowledge of the Secret and

the Capability of Computing and Transmitting a 160-

Bit MAC as Authorization

● User-Programmable Page Write Protection for

Page 0, Page 3, or All Four Pages Together

● User-Programmable OTP EPROM Emulation Mode

for Page 1 (“Write to 0”)

● Communicates to Host with a Single Digital Signal at

15.3kbps or 90.9kbps Using 1-Wire Protocol

● Switchpoint Hysteresis and Filtering to Optimize

Performance in the Presence of Noise

● Reads and Writes over 2.8V to 5.25V Voltage

Range from -40°C to +85°C

● 6-Lead TSOC and TDFN or 2-Lead TO-92 Packages

Applications

● Printer Cartridge Configuration and Monitoring

● Medical Sensor Authentication and Calibration

● System Intellectual Property Protection