DTQ35N65GN-EVB中文資料DINTEK數(shù)據(jù)手冊PDF規(guī)格書

? 650V enhancement mode HEMT with integrated driver

? 450mΩ RDSON

? 5V PWM input

? UVLO protection

? Zero reverse recovery

? Low quiescent current driver

? Adjustable turn-on slew rate

? Dv/Dt immunity both with/without driver-supply

? Low propagation delay for up to 2MHz operation

2.0 Topologies and Applications

? As switching FETs in singles, or in pairs as half-bridges

? AC-DC, DC-DC, DC-AC converters

? PFC applications (totem pole and standard)

? High frequency LLC converters

? Mobile chargers and laptop adapters

? LED and motor drives

? Server power supplies

1.0 Features

3.0 Description

The DTQ35N65GN is a 450mΩ, 650V GaN HEMT devicewith integrated driver circuit. The monolithic integration ofdriver minimizes inductance in the gate loop enabling safeand clean switching even at high-voltage high-frequencyoperations.This device makes the applications moreefficient/reliable,and also reduces the size of themagnetic components dramatically. UVLO function of thedevice turns-off the HEMT in case VDD voltage droopsbelow its threshold voltage. A proprietary dv/dt protectioncircuit protects the HEMT from drain-dvdt induced falseturn-on even in the absence of VDD supply. An externalresistance between Vreg and RG allows control of drainvoltage slew rate for best EMI performance.