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9997

DeviceNetPowerSupplyCable,7/8PowerSingle-EndedCordset:Femalestraight,3-pin(2PE),blackbody,63V,12A;PURblackcable,1.00mm2

ProductDescription 0905203301-DeviceNetPowerSupplyCable,7/8PowerSingle-EndedCordset:Femalestraight,3-pin(2+PE),blackbody,63V,12A;PURblackcable, 1.00mm2

BELDENBelden Inc.

百通電纜設(shè)計科技有限公司

9997GH

SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

9997GH

SimpleDriveRequirement

Description AP9997seriesarefromAdvancedPowerinnovateddesignandsiliconprocesstechnologytoachievethelowestpossibleon-resistanceandfastswitchingperformance.Itprovidesthedesignerwithanextremeefficientdeviceforuseinawiderangeofpowerapplications. TheTO-252packa

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

9997GH

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description AP9997seriesarefromAdvancedPowerinnovateddesignandsiliconprocesstechnologytoachievethelowestpossibleon-resistanceandfastswitchingperformance.Itprovidesthedesignerwithanextremeefficientdeviceforuseinawiderangeofpowerapplications. TheTO-252packa

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP9997AGH-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltag

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP9997BGH-HF

SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP9997BGHJ-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP9997BGJ-HF

SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP9997BGJ-HF

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

AP9997GH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號:

    E-L9997ND

  • 制造商:

    STMicroelectronics

  • 功能描述:

    MOSFET DRVR 2.2A 2-OUT HALF BRDG NON-INV 20SOIC - Rail/Tube

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