| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET?PowerMOSFET(VDSS=75V,RDS(on)=0.0078廓,ID=100A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=75V,Rds(on)=0.0078??Id=100A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET(VDSS=75V,RDS(on)=0.0078廓,ID=100A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
P-Channel1.8-V(G-S)MOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
DBLECTRO |
23+ |
原廠原包 |
29960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
MICREL SEMICONDUCTOR |
23+ |
SOP16 |
3000 |
原裝正品假一罰百!可開(kāi)增票! |
詢(xún)價(jià) | ||
EPC-ENGINEEREDPLASTIC |
新 |
11 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
1736+ |
DIP |
8529 |
專(zhuān)營(yíng)繼電器只做原裝正品假一賠十! |
詢(xún)價(jià) | |||
NSK |
23+ |
QFP |
3000 |
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、 |
詢(xún)價(jià) | ||
GOODSKY |
2023+環(huán)?，F(xiàn)貨 |
專(zhuān)業(yè)繼電器 |
6800 |
專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢(xún)價(jià) | ||
Panduit Corp |
23+ |
原廠封裝 |
2 |
只做原裝只有原裝現(xiàn)貨實(shí)報(bào) |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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- E14-15-F-P-B-A-1
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