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MJD45H11

iscSiliconPNPPowerTransistors

DESCRIPTION ?LowCollector-EmitterSaturationVoltage:VCE(sat)=1.0V(Max)@IC=8A ?FastSwitchingSpeeds ?ComplementtoTypeMJD44H11 ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designedfor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD45H11

GateDriver

Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan

POWEREX

Powerex Power Semiconductors

MJD45H11

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

ComplementaryPowerTransistorsSILICONPOWERTRANSISTORS8AMPERES

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

Designedforgeneralpurposepowerandswitching

RECTRON

Rectron Semiconductor

MJD45H11

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

80V,8APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Ele

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD45H11

iscSiliconPNPPowerTransistors

DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=-1.0V(Max)@IC=-8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD44H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinap

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD45H11A

80V,8APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11A 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?El

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD45H11G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
25+23+
TO220
33458
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
FAIRCHILD
24+
TO220
65200
一級代理/放心采購
 詢價
FAIRCHILD/仙童
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
23+
TO-220
2995570
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCHILD
TO220
9500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
FAIRCHILD/仙童
24+
NA/
18
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
FAIRCHILD
2022+
TO220
20000
只做原裝進口現(xiàn)貨.假一罰十
 詢價
FAIRCHILD/仙童
25+
TO-220
800
原裝正品,假一罰十!
 詢價
ST
23+
模塊
900
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
 詢價
ST
23+
模塊
3562
詢價
更多E45H11供應商 更新時間2025-4-10 16:49:00

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