BZX8450-C5V6-Q

Marking：E7；Package：SOT23；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤250mW ?Toleranceseries:approximately±5 ?Workingvoltagerange:nominal1.8Vto10V ?Specif

BZX84W-B6V2

Marking：E7；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Wideworkingvoltagerange:nominal2.4Vto75V(E24range) ?Twotoleranceseries:±2and±5 3.Applications ?Gene

MM5Z11VT5G

Marking：E7；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Non-repetitivepeakreversepowerdisspation:≤40W ?Totalpowerdissipation:≤300mW ?Toleranceseries:±2 ?Wide

NC7SZ11L6X

Marking：E7；Package：MicroPak；TinyLogic UHS Three-Input AND Gate

Description TheNC7SZ11isasinglethree?inputANDGatefromonsemi’s Ultra?HighSpeedSeriesofTinyLogic.Thedeviceisfabricatedwith advancedCMOStechnologytoachieveultra?highspeedwithhigh outputdrivewhilemaintaininglowstaticpowerdissipationovera broadVCCoperatingrang

PDTC143XQB

Marking：E7；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTC143XQB-Q

Marking：E7；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?QualifiedaccordingtoAEC-Q

PDTC144EM

Marking：E7；Package：SC-101；NPN resistor-equipped transistors; R1 = 47 k?, R2 = 47 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

PDTD123YK

Marking：E7；Package：SC-59A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PMEG1030EJ

Marking：E7；Package：SC-90；10 V, 3 A ultra low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin averysmallandflatleadSOD323FSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Forwardcurrent:3A ?Reversevoltage:10V ?Ultralow

PMEG60T50ELP

Marking：E7；Package：CFP5；60 V, 5 A low leakage current Trench Schottky barrier rectifier

1.Generaldescription TrenchSchottkybarrierrectifierencapsulatedinaCFP5(SOD128)smallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤5A ?Reversevoltage:VR≤60V ?Lowforwardvoltage ?Lowleakagecur