零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 華羿微電華羿微電子股份有限公司 | HUAYI | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 華羿微電華羿微電子股份有限公司 | HUAYI | ||
N-ChannelMOSFETTransistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPOWERMOSFET | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
EB1310
- 功能描述:
Analog IC
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
EBYELECTRO |
24+ |
35200 |
一級(jí)代理/放心采購 |
詢價(jià) | |||
昆山震岳電子精密有限公司 |
23+ |
C0603 |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
ECLIPTEK |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |
相關(guān)規(guī)格書
更多- EB1311
- EB13C3C1H-40.000M
- EB13C3C1H-40000M
- EB13C3D1H-40.000M
- EB13C3D1H-40.000MTR
- EB13C3D1H-40000M
- EB13C3D1H-40000MTR
- EB13C3D2H-40.000M
- EB13C3D2H-40.000MTR
- EB13C3D2H-40000M
- EB13C3D2H-40000MTR
- EB13C3E1H-40.000M
- EB13C3E1H-40.000MTR
- EB13C3E2H-40.000M
- EB13C3E2H-40000M
- EB13C3F1H-40.000M
- EB13C3F1H-40000M
- EB13C3F1H-40000MTR
- EB13C3F2H-40.000M
- EB13C3F2H-40.000MTR
- EB13C3F2H-40000M
- EB13C3F2H-40000MTR
- EB13C3G1H-40.000M
- EB13C3G1H-40000M
- EB13C3G1H-40000MTR
- EB13C3G2H-40.000M
- EB13C3G2H-40.000MTR
- EB13C3G2H-40000M
- EB13C3G2H-40000MTR
- EB13C3H1H-40.000M
- EB13C3H1H-40.000MTR
- EB13C3H1H-40000M
- EB13C3H1H-40000MTR
- EB13C3H2H-40000M
- EB13C3J1H-40.000M
- EB13C3J1H-40000M
- EB13C3J2H-40.000M
- EB13C3J2H-40000M
- EB13C3K1H-40.000M
- EB13C3K1H-40000M
- EB13C3K2H-22.1184M
- EB13C3K2H-40.000MTR
- EB13C3K2H-40000MTR
- EB13C5C1H-40.000M
- EB13C5C1H-40.000MTR
相關(guān)庫存
更多- EB13C3
- EB13C3C1H-40.000MTR
- EB13C3C2H-40000MTR
- EB13C3D1H-40.000M
- EB13C3D1H-40.000MTR
- EB13C3D1H-40000M
- EB13C3D1H-40000MTR
- EB13C3D2H-40.000M
- EB13C3D2H-40.000MTR
- EB13C3D2H-40000M
- EB13C3D2H-40000MTR
- EB13C3E1H-40.000M
- EB13C3E1H-40.000MTR
- EB13C3E2H-40.000MTR
- EB13C3E2H-40000MTR
- EB13C3F1H-40.000MTR
- EB13C3F1H-40000MTR
- EB13C3F2H-40.000M
- EB13C3F2H-40.000MTR
- EB13C3F2H-40000M
- EB13C3F2H-40000MTR
- EB13C3G1H-40.000M
- EB13C3G1H-40.000MTR
- EB13C3G1H-40000M
- EB13C3G1H-40000MTR
- EB13C3G2H-40.000M
- EB13C3G2H-40.000MTR
- EB13C3G2H-40000M
- EB13C3G2H-40000MTR
- EB13C3H1H-40.000M
- EB13C3H1H-40.000MTR
- EB13C3H1H-40000M
- EB13C3H1H-40000MTR
- EB13C3H2H-40000MTR
- EB13C3J1H-40.000MTR
- EB13C3J1H-40000MTR
- EB13C3J2H-40.000MTR
- EB13C3J2H-40000MTR
- EB13C3K1H-40.000MTR
- EB13C3K1H-40000MTR
- EB13C3K2H-40.000M
- EB13C3K2H-40000M
- EB13C5
- EB13C5C1H-40.000M
- EB13C5C1H-40.000MTR