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IRF730

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF730

SMPSMOSFET

SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand

IRF

International Rectifier

IRF730

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

SUNTAC

Suntac Electronic Corp.

IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF730

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

IRF730

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF730

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00?@VGS=10V ●Ultralowgatec

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

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PHILIPSECG
23+
2122
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ECG
24+
35200
一級(jí)代理/放心采購
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23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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NTE
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
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23+
DIP-14
5177
現(xiàn)貨
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67500
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23+
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1053
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1742+
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98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
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量大可定ECG
22+
DIP8
25000
只有原裝原裝,支持BOM配單
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ECG
TO-18
5
原裝現(xiàn)貨 實(shí)單可談
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更多ECG730供應(yīng)商 更新時(shí)間2025-4-8 11:22:00