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AM29F040-70PCB

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29F040-70PE

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29F040-70PEB

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29F040-70PI

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29F040-70PIB

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AS29F040-70LC

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

AS29F040-70LI

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

AS29F040-70TC

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

AS29F040-70TI

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

EN29F040-70J

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040

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