EMB28A04G

Dual N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS40V RDSON(MAX.)28mΩ ID7A Pb‐FreeLeadPlating&HalogenFree

EMB28C03G

N & P??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: N‐CHP‐CH BVDSS30V‐30V RDSON(MAX.)28mΩ40mΩ ID7A‐6A Pb‐FreeLeadPlating&HalogenFree

EMB3

Marking：B3；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

Generalpurpose(dualdigitaltransistors) Features 1)TwoDTA114TchipsinaEMTorUMTorSMTpackage.

EMB3

Marking：B3；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA143TchipsinaEMT6orUMT6orSMT6package. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DR

EMB3

DIGITAL TRANSISTOR (PNP PNP)

FEATURES ●TwoDTA143Tchipsinapackage ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareacanbecutinhalf.

EMB3

Dual Digital Transistors (PNPPNP)

DualDigitalTransistors(PNP+PNP) FEATURES ●TwoDTA143Tchipsinapackage ●Transistorelementsareindependent,eliminatinginterference ●Mountingcostandareacanbecutinhalf

EMB30P03A

P??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS‐30V RDSON(MAX.)30mΩ ID‐22A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB30P03VAT

P??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS‐30V RDSON(MAX.)30mΩ ID‐8A Pb‐FreeLeadPlating&HalogenFree

EMB32A03G

Dual N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS30V RDSON(MAX.)32mΩ ID6.5A Pb‐FreeLeadPlating&HalogenFree

EMB32C03G

N & P??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: N‐CHP‐CH BVDSS30V‐30V RDSON(MAX.)32mΩ40mΩ ID6.5A‐6A Pb‐FreeLeadPlating&HalogenFree