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EMB37N06A

N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS60V RDSON(MAX.)37mΩ ID20A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

PHB37N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB37N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHB37N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB37N06T

N-Channel60V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHD37N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD37N06LT

N-Channel60-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHD37N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP37N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP37N06

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

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24+
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357
只做原廠渠道 可追溯貨源
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EMC
24+
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499834
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EMC
16+
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2500
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EMC
25+23+
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27169
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EMC
18+
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85600
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杰力
20+
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32550
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80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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EMC
23+
TO-252
30000
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杰力
24+
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65300
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EMC
11+PBF
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357
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更多EMB37N06A供應(yīng)商 更新時(shí)間2025-4-25 16:36:00