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EMH25

Marking：T2R；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTC143ZchipsinaEMTpackage. 2)MountingpossiblewithEMTautomaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure EpitaxialplanartypeNPNsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EMH2601

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-PurposeSwitchingDeviceApplications Features ?TheEMH2601incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. ?1.8Vdrive.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

EMH2602

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-PurposeSwitchingDeviceApplications Features ?TheEMH2602incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. ?4Vdrive.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

EMH2603

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-PurposeSwitchingDeviceApplications Features ?TheEMH2603incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. ?Nch:2.5Vdrive. ?Pch:1.8Vdrive.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

EMH2604

General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features ?Nch+PchMOSFET ?ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) ?1.8Vdrive ?Halogenfreecompliance

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

EMH2604

Power MOSFET

Features ?Nch+PchMOSFET ?ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) ?1.8Vdrive ?Halogenfreecompliance

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

EMH2604-TL-H

Power MOSFET

Features ?Nch+PchMOSFET ?ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) ?1.8Vdrive ?Halogenfreecompliance

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

EMH2801

SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting ?[MOSFET] ?LowON-resistance ?1.8Vdrive ?[SBD] ?Smallswitching

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

EMH2801

P-Channel Power MOSFET

P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features ?CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting ?[MOSFET] ?LowON-resistance ?1.8Vdrive ?[SBD] ?Smal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

EMH2801-TL-H

P-Channel Power MOSFET

P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features ?CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting ?[MOSFET] ?LowON-resistance ?1.8Vdrive ?[SBD] ?Smal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    EMH2

  • 制造商：

    ROHM Semiconductor

  • 功能描述：

    DIVIDER TYPE NPNx2 SM DIGITAL TRANSISTOR EMT5/6

  • 功能描述：

    DIVIDER TYPE NPNx2 SM DIGITAL TRANSISTOR EMT5/6 - free partial T/R at 500.

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
SOT143
5000
原裝正品,假一罰十
 詢價
ROHM
24+
SOT-563
99825
新進(jìn)庫存/原裝
 詢價
ROHM
17+
SOT563
6200
100%原裝正品現(xiàn)貨
 詢價
ROHM
23+
EMT6
7750
全新原裝優(yōu)勢
 詢價
ROHM
1844+
SOT-563
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
ROHM
21+
EMT6
12588
原裝正品,自己庫存 假一罰十
 詢價
ROHM
23+
SOT666
999999
原裝正品現(xiàn)貨量大可訂貨
 詢價
長電
2020+
SOT-563
26910
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ROHM
19+
SOT666
20000
4300
 詢價
ROHM
24+
SOT666
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！
 詢價
更多EMH2供應(yīng)商 更新時間2025-4-11 15:36:00

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