零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
TVVERTICALDEFLECTIONBOOSTER ■POWERAMPLIFIER ■FLYBACKSUPPLYVOLTAGESEPARATED ■THERMALPROTECTION DESCRIPTION DesignedformonitorsandhighperformanceTVs, theTDA8179FSverticaldeflectionboosterisable toworkwithaflybackvoltagemorethanthedouble ofVs. TheTDA8179FSoperateswithsuppliesupto42 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
TVVERTICALDEFLECTIONBOOSTER DESCRIPTION DesignedformonitorsandhighperformanceTVs,theTDA8179Sverticaldeflectionboosterdeliversflybackvoltagesupto90V. TheTDA8179Soperateswithsuppliesupto42Vandprovidesupto2Appoutputcurrenttodrivetoyoke. TheTDA8179SisofferedinHEPTAWATTpackage. ■POWER | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50?widebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50?widebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SILICONRFICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V ?Supplyvoltage:VCC=2.4to3.3V ?Highefficiency:PO(1dB)=+3.0dBmTYP.@f=1.0GHz PO(1dB)=+1.5dBmTYP.@f=1.9GHz PO(1dB)=+1.0dBmTYP.@f=2.4GHz ?Powergain:GP=13.5dBTYP.@f=1.0GH | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V ?Supplyvoltage:VCC=2.4to3.3V ?Excellentisolation:ISL=43.0dBTYP.@f=1.0GHz ISL=42.0dBTYP.@f=1.9GHz ISL=42.0dBTYP.@f=2.4GHz ?Powergain:GP=13.5dBTYP.@f=1.0GHz GP=15.5dBT | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào):
ENN8179
- 制造商:
SANYO
- 制造商全稱:
Sanyo Semicon Device
- 功能描述:
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ESCUTCHEONDESKTOPCONSOLE |
24+ |
165 |
詢價(jià) | ||||
N/A |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
N/A |
DIP-3 |
35560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
ONSemiconductor |
24+ |
SMD |
15600 |
ONSemiconductor |
詢價(jià) | ||
ON |
20+ |
射頻元件 |
155 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
onsemi(安森美) |
24+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
Mean |
1931+ |
N/A |
51 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
MW |
23+ |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
MEANWELL |
1000 |
詢價(jià) | |||||
POWER SUPPLY |
10 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中! |
詢價(jià) |
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