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FPN430

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto2.0Acontinuous. SourcedfromProcessPB.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FPN430A

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto2.0Acontinuous. SourcedfromProcessPB.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FRL430D

2A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRL430H

2A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRL430R

2A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRM430

SecondGenerationRadHardMOSFETResults

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FRM430D

3A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRM430H

3A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRM430R

3A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS430D

3A,500V,2.52Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    EQ-430L

  • 制造商:

    Asahi Kasei Microsystems Co Ltd

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更多EQ-430L供應(yīng)商 更新時(shí)間2025-4-26 16:40:00