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MJ10015

50AMPERENPNSILICONPOWERDARLINGTONTRANSISTORS400AND500VOLTS250WATTS

SWITCHMODESeriesNPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ10015

POWERTRANSISTORS(50A,400-500V,250W)

SWITCHMODESERIESNPNSILICONPOWERDARLINGTONTRANSISTORSWITHBASE-EMITTERSPEEDUPDIODE TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MUR10015CT

ULTRAFASTRECTIFIERS

ULTRAFASTSWITCHMODEPOWERRECTIFIER ...designedforuseinswitchingpowersupplies,inverters,andasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ●DualDiodeConstruction ●LowLeakageCurrent ●LowForwardVoltage ●175°COperatingJunctionTemperatu

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PS-10015

100WSingleOutputIndustrialDINRailPowerSupply

ALTECH

Altech Corporation

PTC10015

NPNDarlingtonTransistors

NPNDarlingtonTransistorsTO-204MA(TO-3)

MicrosemiMicrosemi Corporation

美高森美美高森美公司

PTF10015

50Watts,300-960MHzGOLDMOSFieldEffectTransistor

Description ThePTF10015isa50WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom300to960MHz.Itoperatesat55efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationareusedtoensureexcellentdevicelifetimeandreliability. Features

EricssonEricsson Microelectronics

愛立信愛立信公司

SB10015M

LowIRSchottkyBarrierDiode15V,1.0ARectifier

15V,1.0ARectifier Features ?Smallswitchingnoise ?Lowleakagecurrentandhighreliabilityduetohighlyreliableplanarstructure ?Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight0.85mm) Applications ?Highfrequencyrectification(switchingregulators

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

SB10015M

SchottkyBarrierDiode

SchottkyBarrierDiode 15V,1A,LowIR,SingleMCPH3 Features ?Smallswitchingnoise ?Halogenfreecompliance ?Lowleakagecurrentandhighreliabilityduetohighlyreliableplanarstructure ?Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight0.85mm) Appl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SB10015M-TL-E

15V,1.0ARectifier

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

SB10015M-TL-E

SchottkyBarrierDiode

SchottkyBarrierDiode 15V,1A,LowIR,SingleMCPH3 Features ?Smallswitchingnoise ?Halogenfreecompliance ?Lowleakagecurrentandhighreliabilityduetohighlyreliableplanarstructure ?Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight0.85mm) Appl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    EX-10015

  • 功能描述：

    基本/快動(dòng)開關(guān) HAZARDOUS LOCATION

  • RoHS：

    否

  • 制造商：

    Omron Electronics

  • 觸點(diǎn)形式：

    SPDT

  • 執(zhí)行器：

    Lever

  • 電流額定值：

    5 A 電壓額定值

  • AC：

    250 V 電壓額定值

  • DC：

    30 V

  • 工作力：

    120 g IP

  • 等級(jí)：

    IP 67 NEMA

  • 端接類型：

    Wire

  • 安裝：

    Panel

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97
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1068
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2650
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35200
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23+
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50000
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10000
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22+
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50000
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125000
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573
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更多EX-10015供應(yīng)商 更新時(shí)間2025-3-24 16:30:00

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