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F1008

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlife

Polyfet

Polyfet RF Devices

F10080

My-Com precision switches

IVOBaomeng Electronics (Shanghai) Co., Ltd

堡盟電子堡盟電子（上海）有限公司

F10088164

包裝：散裝 類別：傳感器，變送器 位置傳感器 - 角度、線性位置測量 描述：POS TRANS-ELEMENT \u0026 BRACKET ASSY

Honeywell Sensing and Productivity Solutions

Honeywell Sensing and Productivity Solutions

Honeywell Sensing and Productivity Solutions

FA1008AN

MHzRangeCrystalUnit

EPSONTOYOCOMEpson ToYoCom

愛普生愛普生拓優(yōu)科夢

FB1008

10Amp.GlassPassivatedBridgeRectifier

[FAGOR] 10Amp.GlassPassivatedBridgeRectifier ?GlassPassivatedJunction ?ULrecognizedundercomponentindexfilenumberE130180 ?Terminals:FASTON① ?Terminals:WIRELEADS② ?Max.MountingTorque:25Kgxcm LeadandpolarityidentificationsHighsurgecurrentcapability

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FB1008L

10Amp.GlassPassivatedBridgeRectifier

[FAGOR] 10Amp.GlassPassivatedBridgeRectifier ?GlassPassivatedJunction ?ULrecognizedundercomponentindexfilenumberE130180 ?Terminals:FASTON① ?Terminals:WIRELEADS② ?Max.MountingTorque:25Kgxcm LeadandpolarityidentificationsHighsurgecurrentcapability

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FBR1008

FASTRECOVERYBRIDGERECTIFIERS

PRV:50-1000Volts Io:10Amperes FEATURES: *Highcasedielectricstrength *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Fastswitchingforhighefficiency *Idealforprintedcircuitboard *Pb/RoHSFree

EIC

EIC discrete Semiconductors

FBR1008

SiliconFastRecoveryBridgeRectifier

SiliconFastRecoveryBridgeRectifier

EDAL

Edal Industries, Inc.

FBR1008

FASTRECOVERY

EIC

EIC discrete Semiconductors

FGBU1008

10.0AUITRASOFTRECOVERYBRIDGE

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

詳細(xì)參數(shù)

  • 型號：

    F1008

  • 制造商：

    POLYFET

  • 制造商全稱：

    Polyfet RF Devices

  • 功能描述：

    PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
POLYFET
21+
VQFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
POLYFET
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
 詢價(jià)
POLYFET
24+
227
現(xiàn)貨供應(yīng)
 詢價(jià)
POLYFET
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢
 詢價(jià)
POLYFET
21+
假一賠十
3
原裝現(xiàn)貨假一賠十
 詢價(jià)
POLYFET
24+
SMD
1500
原裝現(xiàn)貨假一賠十
 詢價(jià)
POLYFET
2021+
NA
3000
十年專營原裝現(xiàn)貨,假一賠十
 詢價(jià)
POLYFET
1607+
假一賠十
3
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
POLYFET
23+
2503
原廠原裝正品
 詢價(jià)
POLYFET
2023+
假一賠十
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價(jià)
更多F1008供應(yīng)商 更新時(shí)間2025-3-30 21:15:00

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