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F1429HB

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1429LB

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1429MB

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1429MBEVB

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1429MBNELI

Marking：14MB；Package：12-DFN；100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1429MBNELI8

Marking：14MB；Package：12-DFN；100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1430

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

Polyfet

Polyfet RF Devices

F1456

TX Digital VGA 1500 MHz to 2950 MHz

TheF1456isaHighGain/HighLinearity1500MHz to2950MHzTXDigitalVariableGainAmplifierused intransmitterapplications. TheF1456TXDVGAprovides32.1dBmaximum gainwith+38dBmOIP3and3.9dBnoisefigure.Up to31.5dBgaincontrolisachievedusingthe combinationofadigital

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1475

1W High Linearity RF Amplifier 1350MHz to 2800MHz

Features ■Frequencyrange:1350MHzto2800MHz ■TBDtypicalgainat2100MHz ■+30dBmtypicalOP1dBat2100MHz ■50ΩSingle-endedinputandoutputimpedances ■5Vpowersupply ■180mAtypicalquiescentsupplycurrent ■1.8Vlogiccompatiblestandbymodeforpower savings ■Operatingtempe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1475_V01

1W High Linearity RF Amplifier 1350MHz to 2800MHz

Features ■Frequencyrange:1350MHzto2800MHz ■TBDtypicalgainat2100MHz ■+30dBmtypicalOP1dBat2100MHz ■50ΩSingle-endedinputandoutputimpedances ■5Vpowersupply ■180mAtypicalquiescentsupplycurrent ■1.8Vlogiccompatiblestandbymodeforpower savings ■Operatingtempe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    F14

  • 制造商：

    MTRONPTI

  • 制造商全稱：

    MTRONPTI

  • 功能描述：

    9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator

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CURTISIND
05+
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4283
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6680
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CurtisIndustries
新
5
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Curtis Industries
2022+
1
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Curtis
22+
NA
82
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24+
N/A
51000
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Curtis Industries
25+
LINE FILTER 250VAC 6A CHASSIS
9350
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10858
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WESTCODE
23+
模塊
160
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專業(yè)模塊
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更多F14供應(yīng)商 更新時間2025-4-21 15:49:00

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