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GRF2011

BroadbandLinearGainBlock0.05to3.8GHz

GUERRILLA

Guerrilla RF, Inc.

GRHI-2011

ASSEMBLYDRAWINGHIGHIMPACTROCKERSWITCH1.124x.550PANEL

CWIND

CW Industries

H2011U

4&6TumblerPowerSwitchlocks

Features/Benefits ?Positivedetent ?Multi-poleandmulti-position ?Snap-togetherassembly ?Powerswitching

CK-COMPONENTS

C&K Components

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    F2011

  • 制造商：

    MPD

  • 制造商全稱：

    MicroPower Direct, LLC

  • 功能描述：

    Low Cost, Compact 20W,

  • 2：

    1 Input Range DC/DC Converters

供應(yīng)商型號品牌批號封裝庫存備注價格
MPD
23+
SIPDIP
17035
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MPD
2021+
DIP
11000
十年專營原裝現(xiàn)貨,假一賠十
 詢價
POLYFEI
23+
高頻管
280
專營高頻管模塊,全新原裝!
 詢價
POLYFET
24+
23
詢價
TI
23+
SSOP-14
1031
優(yōu)勢庫存
 詢價
POLYFET
24+
285
現(xiàn)貨供應(yīng)
 詢價
POLYFET
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
TI/德州儀器
2447
TSSOP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
POLYFET
22+
原廠封裝
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價
TI
23+
QFN-16
24546
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
更多F2011供應(yīng)商 更新時間2025-4-5 11:10:00

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