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F3710S中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

F3710S
廠商型號(hào)

F3710S

功能描述

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

文件大小

184.53 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-11 17:30:00

F3710S規(guī)格書(shū)詳情

VDSS = 100V

RDS(on) = 23m?

ID = 57A

Description

Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

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