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FSAV430QSCX

LowVoltage1.1GHz,4-Channel,2:1VideoSwitch

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FSL430D

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSL430R

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS430D

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS430R

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYE430D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

FSYE430R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

GFC430

NChannelPowerMOSFETwithlowRDS(on)

GSG

Gunter Seniconductor GmbH.

GME430R

RedPointPro-2.4GHzGyroscopicPresentationMousewithLaserPointer

IOGEAR

iogear

GP430

DiscCeramicCapacitors

GeneralPurposeCapacitors TypeGgeneralpurposediscceramiccapacitorsareanidealchoiceforlowcost,smallsizeandlowtohighDCvoltage,generalpurpose,coupling,by-passandfilteringapplications. Highlights ?Smallsize ?Conformallycoated ?Radialleads ?Generalpurpose ?L

CDE

Cornell Dubilier Electronics

詳細(xì)參數(shù)

  • 型號:

    F430-ND

  • 制造商:

    LITTELFUSE

  • 制造商全稱:

    Littelfuse

  • 功能描述:

    3AG Slo-Blo Fuse 313/315 Series

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歐派克
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6500
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INFIN
18+
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85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
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Infineon
專業(yè)模塊
MODULE
8513
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INFINEON/英飛凌
2022+
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8600
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10340
一級代理原裝正品現(xiàn)貨,支持實單!
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2023+
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600
專營模塊,繼電器,公司原裝現(xiàn)貨
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23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
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INFINEON/英飛凌
2023+
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48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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更多F430-ND供應(yīng)商 更新時間2025-4-26 12:02:00