F50D2G41XA-83YG2B中文資料晶豪科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

FEATURES

? Single-level cell (SLC) technology

? Organization

- Page size x1: 2176 bytes (2048 + 128 bytes)

- Block size: 64 pages (128K + 8K bytes)

- Device size: 2Gb (2 planes, 1024 blocks per plane)

? Standard and extended SPI-compatible serial bus

interface

- Instruction, address on 1 pin; data out on 1, 2, or 4 pins

- Instruction on 1 pin; address, data out on 2 or 4 pins

- Instruction, address on 1 pin; data in on 1 or 4 pins

? User-selectable internal ECC supported

- 8 bits/512 bytes

? Array performance

- 104 MHz clock frequency (MAX)

- Page read: 30μs (MAX) with on-die ECC disabled; 80μs

(MAX) with on-die ECC enabled

- Page program: 200μs (TYP) with on-die ECC disabled;

220μs (TYP) with on-die ECC enabled

- Block erase: 2ms (TYP)

? Advanced features

- Read page cache mode

- Read unique ID

- Read parameter page

? Device initialization

- Automatic device initialization after power-up

? Security

- Block 0 is valid when shipped from factory

with ECC enabled

- Software write protection with lock register

- Hardware write protection to freeze BP bits

- Lock tight to freeze BP bits during one power cycle

instead of WP#

? Permanent block lock protection

- OTP Space: 10 pages one-time programmable

NAND Flash memory area

? Operating voltage range

- VCC = 1.7–1.95V

? Operating temperature

- Commercial: 0°C to +70°C

? Quality and reliability

- Endurance: 100,000 PROGRAM/ERASE cycles

- Data retention: JESD47H-compliant;

see qualification report

- Additional: Uncycled data retention: 10 years 24/7 @ 70°C