NC7SV02FHX

Marking：F6；Package：MicroPak2；TinyLogic ULP-A 2-Input NOR Gate

TheNC7SV02isasingle2?InputNORGateintinyfootprint packages.ThedeviceisdesignedtooperateforVCC=0.9Vto3.6V. Features ?Designedfor0.9Vto3.6VVCCOperation ?1.5nstPDat3.3V(Typ) ?Inputs/OutputsOver?VoltageTolerantupto3.6V ?IOFFSupportsPartialPower

NC7SV02L6X

Marking：F6；Package：MicroPak；TinyLogic ULP-A 2-Input NOR Gate

TheNC7SV02isasingle2?InputNORGateintinyfootprint packages.ThedeviceisdesignedtooperateforVCC=0.9Vto3.6V. Features ?Designedfor0.9Vto3.6VVCCOperation ?1.5nstPDat3.3V(Typ) ?Inputs/OutputsOver?VoltageTolerantupto3.6V ?IOFFSupportsPartialPower

NJU77251F3

Marking：F6；Package：SC-88A；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+=5V,Typicalvalue,Ta=25°C) ?PropagationDelay(TPLH/TPHL) -NJU7725x42ns/35ns -NJU7726x125ns/32ns ?Rail-to-RailCommon-ModeInputVoltageRange 0.2VbeyondSupplyRails ?DynamicTransientStabilizerTM -Rail-to-RailInputwithlesspropagationdelay fluctuat

PBLS2001D

Marking：F6；Package：SC-74；20 V PNP BISS loadswitch

Features *LowVCEsat(BISS)andresistor-equippedtransistorinonepackage *Lowthresholdvoltage(

PDTA115EM

Marking：F6；Package：SC-101；PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PDTA115EM

Marking：F6；Package：SOT-883；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PDTA115EM

Marking：F6；Package：SOT-883；PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PMF370XN

Marking：F6；Package：SOT323；N-channel TrenchMOS extremely low level FET

1.Generaldescription ExtremelylowlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 2.Featuresandbenefits

PTVS12VP1BPL

Marking：F6；Package：CFP5-FL；600 W Transient Voltage Suppressor

1.Generaldescription 600Wbi-directionalTransientVoltageSuppressor(TVS)inaCFP5-FL(SOD128FL)smallandflat leadSurface-MountedDevice(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits ?Ratedpeakpulsepowerat10/1000μswaveform:PPPM=

RB751CS40

Marking：F6；Package：SOD-882；Schottky barrier single diodes

Generaldescription PlanarSchottkybarriersinglediodeswithanintegratedguardringforstressprotection,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Lowforwardvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping