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FJV4105R

PNPEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R1=4.7K?,R2=10K?) ?ComplementtoFJV3105R

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FKS4105

40VP-ChannelMOSFET

Features ?AdvancedTrenchMOSTechnology ?LowGateCharge ?100EASGuaranteed ?GreenDeviceAvailable Applications ?LoadSwitches ?HardSwitchingandHighSpeedCircuit

FETEKFETek Technology Corp.

臺灣東沅東沅科技股份有限公司

HO-NP-4105

CurrentTransducer

LEMlem

萊姆萊姆集團

HO-P-4105

CurrentTransducer

LEMlem

萊姆萊姆集團

IIRFR4105

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIRFR4105Z

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤24.5m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFL4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=3.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFL4105

UltraLowOn-Resistance

Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpickand-placeaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla

KERSEMI

Kersemi Electronic Co., Ltd.

IRFL4105

60VN-ChannelIRFL4105

GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superior switchingperformance,andwithstandhigh energypulse intheavalancheandcommutation modes. Thesedevicesareparticula

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRFL4105PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

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FA
24+
DIP8
1000
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FA
24+
DIP8
2000
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HITACHI
23+
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6500
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23+
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11888
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FUJITSU
24+
模塊
90000
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HITACHI/日立
24+
ZIP
164
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HITACHI
24+
ZIP
36500
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HITACHI/日立
2447
ZIP
100500
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50000
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HITACHI
23+
ZIP-14
50000
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更多FA4105P供應商 更新時間2025-5-12 16:30:00