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FB41N15D

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IIRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB41N15DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15DPBF

HighfrequencyDC-DCconverters

Benefits ●LowGate-to-DrainChargetoReduce ??SwitchingLosses ●FullyCharacterizedCapacitanceIncluding ??EffectiveCOSStoSimplifyDesign,(SeeApp. ??NoteAN1001) ●FullyCharacterizedAvalancheVoltage ??andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFB41N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFIB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFIB41N15D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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I
22+
TO220
6000
十年配單,只做原裝
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IR
2023+環(huán)?，F(xiàn)貨
TO220
10
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TO220
8400
專注配單,只做原裝進(jìn)口現(xiàn)貨
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I
23+
TO220
8400
專注配單,只做原裝進(jìn)口現(xiàn)貨
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I
25+
TOTO-220
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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VB
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5000
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VIRTEX
0526-
15
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FB
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原廠封裝
11888
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INTERSIL
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69820
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IR
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12245
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更多FB41N15D供應(yīng)商 更新時(shí)間2025-4-26 14:01:00

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