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FG055

GAUSSIANFILTERS

FaradayFaraday Technology

智原科技智原科技股份有限公司

FSF055D

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF055R

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ055D

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSJ055R

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYC055D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FSYC055R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FVDB-055B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDB-055BHV

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDT-055B

ThreePhaseDoubleStage

PREMOPREMO CORPORATION S.L

普萊默

詳細(xì)參數(shù)

  • 型號(hào):

    FBH055

  • 功能描述:

    Fuse

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MATSUSHITA
11
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MATSUSHIT
24+
35200
一級(jí)代理/放心采購(gòu)
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24+
N/A
69000
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FACON
1142
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更多FBH055供應(yīng)商 更新時(shí)間2025-3-27 18:16:00