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FCD5N60TM-WS

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCU5N60

600VN-ChannelMOSFET

Description SuperFET?is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCU5N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.6A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCU5N60TU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD5N60NZ

N-ChannelUniFETIIMOSFET600V,4.0A,2Ohm

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD5N60NZTM

N-ChannelUniFETIIMOSFET600V,4.0A,2Ohm

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP5N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDPF5N60NZ

N-ChannelMOSFET600V,4.5A,2.0廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF5N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FGB5N60UNDF

600V,5AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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VBSEMI/微碧半導(dǎo)體
24+
TO252
48000
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VBSEMI/微碧半導(dǎo)體
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三年內(nèi)
1983
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ON
1809+
TO-252
3675
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ON Semiconductor
2022+
TO-252-3,DPak(2 引線 + 接片
38550
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onsemi(安森美)
23+
TO252
7350
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ON
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DPAK-3 / TO-252-3
25000
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ON(安森美)
23+
11946
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ON SEMICONDUCTOR
24+
con
35960
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23+
DPAK-3TO-252-3
360000
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更多FCD5N60TM-VB供應(yīng)商 更新時(shí)間2025-3-31 16:35:00

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