FDB2570中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

This N-Channel MOSFET has been designed

specifically for switching on the primary side in the

isolated DC/DC converter application. Any application

requiring a 150V MOSFETs with low on-resistance and

fast switching will benefit.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS(ON)specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

? 22 A, 150 V. Rds(on)= 80 m?@ Vgs= 10V

Rds(on)= 90 m?@ Vgs= 6V

? Low gate charge (40nC typical)

? Fast switching speed

? High performance trench technology for extremely low Rds(on)

? 175°C maximum junction temperature rating