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FDB6035L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6035

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6035AL

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6035AL

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FDD6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=46A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD6035AL

N-channelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDP6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP6035L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP6035L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    FDB6035L

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
TO-263AB
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FSC
TO-263
154
正品原裝--自家現(xiàn)貨-實單可談
 詢價
FAIRCHILD/FSC/仙童飛兆半
24+
TO-263
6800
新進庫存/原裝
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAI
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
FAI
25+23+
TO263
75952
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
FSC/ON
23+
原包裝原封 □□
800
原裝進口特價供應(yīng) QQ 1304306553 更多詳細咨詢 庫存
 詢價
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
fairchild
1709+
to-263/d2-pak
32500
普通
 詢價
FAIRCHILD/仙童
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
更多FDB6035L供應(yīng)商 更新時間2025-4-26 16:12:00

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