FDC6304P中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
FDC6304P規(guī)格書詳情
General Description
These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Features
■ -25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V.
■ Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.
■ Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
產(chǎn)品屬性
- 型號(hào)：
FDC6304P
- 功能描述：
MOSFET SSOT-6 P-CH -25V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
SOT23-6 |
6000 |
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) | ||
ON/安森美 |
22+ |
SMD |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價(jià) | ||
ON/安森美 |
22+ |
SOT-163 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
ON |
23+ |
SOT23-6 |
3000 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON/安森美 |
23+ |
SMD |
7000 |
詢價(jià) | |||
FAIRCHILD |
2023+ |
SMD |
5956 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價(jià) | ||
ON/安森美 |
24+ |
SMD |
3000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
2223+ |
SOT23-6 |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn) |
詢價(jià) | ||
FAIRCILD |
22+ |
SOT-163 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
ON/安森美 |
23+ |
SOT23-6 |
6000 |
代理貨源 價(jià)格優(yōu)勢(shì) |
詢價(jià) |
