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FDS6612A

EVALUATIONKIT

INTRODUCINGLX1710/1711AUDIOMAX ThankyouforyourinterestinthelatestgenerationofAudioMAXproducts.TheenclosedLXE1710evaluationboardisafullyfunctionalmonoamplifierdesignedtodemonstratethe“newandimproved”SwitchingClass-DPowerAmplifierICfromLinfinityMicrosemi.The

MicrosemiMicrosemi Corporation

美高森美美高森美公司

FDS6612A

SingleN-Channel,Logic-Level,PowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS6612A

SingleN-Channel,LogicLevel,PowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS6612A

30VN-ChannelMOSFET

Features Fastswitchingspeed Lowgatecharge Highperformancetrenchtechnologyforextremely lowRDS(ON) Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=8.4A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

FDS6612A-NL

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FDU6612A

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF6612

HEXFETPowerMOSFET

Description TheIRF6612combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo

IRF

International Rectifier

IRF6612PBF

RoHsCompliant

Description TheIRF6612PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6612PBF

RoHsCompliant

IRF

International Rectifier

IRF6612TRPBF

RoHsCompliant

Description TheIRF6612PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    FDD6612A_OLDDI

  • 制造商：

    Fairchild

  • 功能描述：

    DPAK, SINGLE, NCH

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
24+
TO-252
60000
全新原裝現(xiàn)貨
 詢價
FAIRCHILD/仙童
22+
SOT252
20000
保證原裝正品,假一陪十
 詢價
FAIRCHILD/仙童
FDD6613A MOS(場效應管)
FAIRCHILD/仙童
648
就找我吧!--邀您體驗愉快問購元件!
 詢價
FAIRCHILD/仙童
24+
TO-252
1200
原裝現(xiàn)貨假一賠十
 詢價
FAI
23+
TO-252
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
FAIRCHIL
24+
TO-252
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
FAIRCHILD/仙童
20+
TO-252
63258
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
FAIRCHILD/仙童
23+
TO-252(DPAK)
90000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCILD
22+
TO-252
8000
原裝正品支持實單
 詢價
更多FDD6612A_OLDDI供應商 更新時間2025-4-27 11:00:00

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