FDN357N中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書
FDN357N規(guī)格書詳情
General Description
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
■ 1.9 A, 30 V, RDS(ON) = 0.090 W @ VGS = 4.5 V
RDS(ON) = 0.060 W @ VGS = 10 V.
■ Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current
capability.
產(chǎn)品屬性
- 型號：
FDN357N
- 功能描述：
MOSFET SSOT-3 N-CH 30V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT23 |
154523 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON |
2022+ |
7600 |
原廠原裝,假一罰十 |
詢價 | |||
ONSEMI/安森美 |
24+ |
原封裝 |
29823 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
FAIRCHILD/仙童 |
2023+PB |
SSOT-3 |
65800 |
詢價 | |||
ONSEMI |
兩年內 |
N/A |
1126 |
原裝現(xiàn)貨,實單價格可談 |
詢價 | ||
ON/安森美 |
21+ |
SOT-23(SOT-23-3) |
21254 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
ON/安森美 |
6000 |
詢價 | |||||
ON/安森美 |
2324+ |
SOT-23(SOT-23-3) |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價 | ||
國產(chǎn)MOS |
2010 |
SOT-23 |
50000 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
FAIRCHILD |
24+ |
SOT23-5 |
1110 |
原裝現(xiàn)貨假一罰十 |
詢價 |
