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20N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB20N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB20N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB20N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB20N6S2DT

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP20N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP20N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    FGB20N6S2T

  • 功能描述:

    IGBT 晶體管 600V N-Channel IGBT SMPS II Series

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD
24+
TO263
7596
詢價(jià)
FAIRCHILD
25+23+
TO263
23231
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
23+
SOT-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FAIRCHILD
2023+
TO263
3000
進(jìn)口原裝現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
24+
NA/
4781
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價(jià)
FAIRCHILD/仙童
25+
SOT-263
1531
原裝正品,假一罰十!
詢價(jià)
FAIRCHILD
24+
SOT-5785&NBS
2000
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
詢價(jià)
FAIRCHILD/仙童
24+
TO-263
60000
全新原裝現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
23+
SOT263
8000
只做原裝現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
23+
SOT263
7000
詢價(jià)
更多FGB20N6S2T供應(yīng)商 更新時(shí)間2025-5-23 16:30:00