FGH4L75T65MQDC50中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

Using the novel field stop 4th generation IGBT technology and

generation 1.5 SiC Schottky Diode technology in TO?247 4?lead

package, FGH4L75T65MQDC50 offers the optimum performance

with both low conduction and switching losses for high?efficiency

operations in various applications, especially totem pole bridgeless

PFC and Inverter.

Features

? Positive Temperature Coefficient for Easy Parallel Operation

? High Current Capability

? 100 of the Parts are Tested for ILM (Note 2)

? Smooth and Optimized Switching

? Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 75 A

? No Reverse Recovery / No Forward Recovery

? Tight Parameter Distribution

? RoHS Compliant

Applications

? Charging Station (EVSE)

? UPS, ESS

? Solar Inverter

? PFC, Converters