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FRX130D

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130H

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130R

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FSL130D

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL130R

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSLH-S130C

2012Size1200/1400MHzChipMultilayerSplitter/Combiner

HITACHI-METALSHitachi Metals, Ltd

日立金屬日立金屬有限公司

FSS130D

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS130R

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FVDB-130B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDB-130BHV

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

詳細參數(shù)

  • 型號：

    FM130-W

  • 功能描述：

    肖特基二極管與整流器 1A 30V Schottky

  • RoHS：

    否

  • 制造商：

    Skyworks Solutions, Inc.

  • 產品：

    Schottky Diodes

  • 峰值反向電壓：

    2 V

  • 正向連續(xù)電流：

    50 mA

  • 配置：

    Crossover Quad

  • 正向電壓下降：

    370 mV

  • 最大功率耗散：

    75 mW

  • 工作溫度范圍：

    - 65 C to + 150 C

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    SOT-143

  • 封裝：

    Reel

供應商型號品牌批號封裝庫存備注價格
RECTRON
19+
DO-214AC
200000
詢價
RECTRON
20+
DO-214AC
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
RECTRON
24+
DO-214AC
56000
原裝現(xiàn)貨假一賠十
 詢價
RECTRON
DO-214AC
56000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
RECTRON
2022+
DO-214AC
20000
只做原裝進口現(xiàn)貨.假一罰十
 詢價
RECTRON
23+
DO-214AC
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
RECTRON
23+
DO-214AC
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
RECTRON
2023+PB
DO-214AC
56000
詢價
RECTRON
23+
SMA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ADI/亞德諾
20+
DIP
8596
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多FM130-W供應商 更新時間2025-4-26 15:13:00

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