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GRF2011

BroadbandLinearGainBlock0.05to3.8GHz

GUERRILLA

Guerrilla RF, Inc.

GRHI-2011

ASSEMBLYDRAWINGHIGHIMPACTROCKERSWITCH1.124x.550PANEL

CWIND

CW Industries

H2011U

4&6TumblerPowerSwitchlocks

Features/Benefits ?Positivedetent ?Multi-poleandmulti-position ?Snap-togetherassembly ?Powerswitching

CK-COMPONENTS

C&K Components

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    FMS2011

  • 制造商：

    FILTRONIC

  • 制造商全稱：

    FILTRONIC

  • 功能描述：

    SP6T GaAs Multi-Band GSM Antenna Switch

供應商型號品牌批號封裝庫存備注價格
FILTRONIC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
RFMD
2017+
SMD
1585
只做原裝正品假一賠十!
 詢價
M/A-COM
24+
SMD
12800
詢價
-
23+
NA
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
2516
原裝現(xiàn)貨
 詢價
RFMD
22+
12QFN
9000
原廠渠道,現(xiàn)貨配單
 詢價
RFMD
21+
12QFN
13880
公司只售原裝,支持實單
 詢價
RFMD
20+
QFN-12
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多FMS2011供應商 更新時間2025-4-25 17:24:00

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