FODM291AR2中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

The FODM291 series consist of a gallium arsenide infrared emitting

diode driving a phototransistor. It built in a compact, half?pitch,

mini?flat, 4?pin package. The lead pitch is 1.27 mm.

Features

? Current Transfer Ratio Ranges from 80 to 600

at IF = 5 mA, VCE = 5 V, TA = 25°C

? FODM291A ? 80 to 160

? FODM291B ? 130 to 260

? FODM291C ? 200 to 400

? FODM291D ? 300 to 600

? Safety and Regulatory Approvals:

? UL1577, 3750 VACRMS for 1 min

? DIN EN/IEC60747?5?5, 565 V Peak Working Insulation Voltage

(Pending)

? Applicable to Infrared Ray Reflow, 260°C

Typical Applications

? Primarily Suited for DC?DC Converters

? For Ground Loop Isolation, Signal to Noise Isolation

? Communications – Adapters, Chargers

? Consumer – Appliances, Set Top Boxes

? Industrial – Power Supplies, Motor Control, Programmable Logic

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