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IRF-634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF634A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF634A

AdvancedPowerMOSFET

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF634A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF634A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF634B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF634B

POWERMOSFET

SUNTAC

Suntac Electronic Corp.

IRF634B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF634B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF634FP

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

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8560
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FITIPOWER
2016+
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6528
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