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KF10N50FZ

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會社

KF10N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會社

KF10N50PR

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies

KECKEC CORPORATION

KEC株式會社

KF10N50PZ

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會社

KSM10N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MP10N50EI

N-CHANNELMOSFET

APPLICATIONS ?Highefficiencyswitch modepowersupplies ?Electroniclampballasts basedonhalfbridge ?UPS FEATURES ?Lowgatecharge ?LowCrss(typical16.6pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

RFH10N50

10A,450Vand500V,0.600Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFM10N50

10A,450Vand500V,0.600Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFP-10N50TV

AluminumNitrideTerminations

ANARENAnaren Microwave

安倫

RFP-10N50TVR

AluminumNitrideTerminations

ANARENAnaren Microwave

安倫

詳細參數(shù)

  • 型號:

    FQB10N50CFTM

  • 功能描述:

    MOSFET 500V 10A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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FAIRCHILD/仙童
24+
TO263
121
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FSC
23+
TO-263
8650
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FSC
25+23+
TO-263
15087
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FSC
1844+
TO263
9852
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FAIRCHILD
20+
TO-2632L(D2PAK)
36900
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FSC
24+
TO-263
80000
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FAIRCHILD/仙童
2447
TO263
100500
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FAIRCHILD/仙童
21+
TO263
1709
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FAIRCHILD/仙童
24+
TO263
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
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FAIRCHILD/仙童
21+
TO263
6000
全新原裝 公司現(xiàn)貨
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更多FQB10N50CFTM供應商 更新時間2025-5-6 9:00:00