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GJ45N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

H45N03E

N-ChannelEnhancement-ModeMOSFET(25V,45A)

Features ?RDS(on)=15m?@VGS=10V,ID=25A ?RDS(on)=20m?@VGS=4.5V,ID=25A ?Advancedtrenchprocesstechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent ?ImprovedShoo

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

MI45N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTB45N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

P45N03LTG

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

PHB45N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB45N03LT

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

PHB45N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB45N03LTA

N-channelenhancementmodefield-effecttransistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB45N03LTA

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU ??????? APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

詳細(xì)參數(shù)

  • 型號:

    FQU45N03LTU

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
I-PAKTO-251
24190
原裝正品代理渠道價格優(yōu)勢
詢價
FAIRCHILD/仙童
21+
I-PAKTO-251
30000
優(yōu)勢供應(yīng) 實單必成 可13點增值稅
詢價
FAIRCHILD/仙童
22+
I-PAKTO-251
18000
原裝正品
詢價
FAIRCHILD/仙童
25+
I-PAKTO-251
54558
百分百原裝現(xiàn)貨 實單必成 歡迎詢價
詢價
FAIRCHILD
24+
TO-251
8866
詢價
仙童
06+
TO-251
5000
原裝
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
FAIRCHILD/仙童
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
詢價
F
TO-251
22+
6000
十年配單,只做原裝
詢價
VBsemi
21+
TO251
10026
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
更多FQU45N03LTU供應(yīng)商 更新時間2025-5-16 16:00:00