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IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105TR

55VN-ChannelMOSFET

Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR4105TRL

AdvancedPlanarTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105TRLPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105TRPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105Z

PowerMOSFET(Vds=55V,Rds(on)=24.5mohm,Id=30A)

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRF

International Rectifier

IRFR4105Z

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105Z

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤24.5m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR4105ZLPBF

AdvancedProcessTechnology

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價(jià)
IR
23+
SOT-252
26000
專業(yè)優(yōu)勢供應(yīng)
 詢價(jià)
IR
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價(jià)
IR
24+
TO-252
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
IR
18+
TO252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
IR
24+
D-PAK
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
ADI/亞德諾
23+
SOT23-6
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
IR
2022+
D-PAK
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
IR
22+
TO-252
8000
原裝正品支持實(shí)單
 詢價(jià)
IR
23+
D-PAK
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多FR4105供應(yīng)商 更新時(shí)間2025-4-8 11:04:00

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