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IRF840

N-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperationarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF840

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF840

N-ChannelPowerMOSFETs,8A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF840

8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin

Intersil

Intersil Corporation

IRF840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight

IRF

International Rectifier

IRF840

TRANSISTORSN-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSN-CHANNEL

IRF

International Rectifier

IRF840

PowerMOSFET(VDSS=500V,RDS(on)=0.85ohm,ID=8.0A)

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

IRF840

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF840

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

IRF840

iscN-ChannelMosfetTransistor

Designedforhighvoltage,highspeedswitchingpowerapplicationssuchasswitchingregulators,converters,solenoidandrelay FEATURES 1.DrainCurrent–ID=8.0A@TC=25℃ 2.DrainSourceVoltage-:VDSS=500V(Min) 3.StaticDrain-SourceOn-Resistance:RDS(on)=0.8

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FR840F

  • 制造商：

    LUGUANG

  • 制造商全稱：

    Shenzhen Luguang Electronic Technology Co., Ltd

  • 功能描述：

    Fast Recovery Rectifiers

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
GENERIC
新
340
全新原裝 貨期兩周
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DACO
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
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DACO
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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DACO
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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GeneSiC
1935+
N/A
55
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GENESIC
1809+
DO-5
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
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GeneSiC
22+
NA
55
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24+
N/A
65000
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GeneSiC Semiconductor
24+
DO-5
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
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GeneSiC Semiconductor
24+
DO/TO
986
碳化硅二極管原廠正品全系列現(xiàn)貨
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更多FR840F供應(yīng)商 更新時(shí)間2025-4-5 16:06:00

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