FSF254D3中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
FSF254D3規(guī)格書詳情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
???
Features
? 18A, 250V, rDS(ON) = 0.170?
? Total Dose
??? - Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
??? - Safe Operating Area Curve for Single Event Effects
??? - SEE Immunity for LET of 36MeV/mg/cm2 with
??????? VDS up to 80 of Rated Breakdown and
??????? VGS of 10V Off-Bias
? Dose Rate
??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
??? - Typically Survives 2E12 if Current Limited to IDM
? Photo Current
??? - 15nA Per-RAD(Si)/s Typically
? Neutron
??? - Maintain Pre-RAD Specifications
??????? for 1E13 Neutrons/cm2
??? - Usable to 1E14 Neutrons/cm2
???
產(chǎn)品屬性
- 型號：
FSF254D3
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
24+ |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||||
N/A |
25+ |
TO220 |
40 |
原裝正品,假一罰十! |
詢價 | ||
FSC/ON |
23+ |
原包裝原封□□ |
2157 |
原裝進口特價供應(yīng)QQ1304306553更多詳細(xì)咨詢庫存 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
SIP9 |
10880 |
原裝正品，支持實單 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
SIP-9 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
FAIRCHILD/仙童 |
13+ |
SIP9 |
27173 |
進口原管現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FairchildSem |
24+ |
9-SIP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
NIEC |
24+ |
TO-220 |
50000 |
詢價 |
