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FSL234R1中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

FSL234R1
廠商型號

FSL234R1

功能描述

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

文件大小

46.03 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-16 14:26:00

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FSL234R1規(guī)格書詳情

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

Features

? 4A, 250V, rDS(ON) = 0.610?

? Total Dose

?? - Meets Pre-RAD Specifications to 100K RAD (Si)

? Single Event

?? - Safe Operating Area Curve for Single Event Effects

?? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias

? Dose Rate

?? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS

?? - Typically Survives 2E12 if Current Limited to IDM

? Photo Current

?? - 4.0nA Per-RAD(Si)/s Typically

? Neutron

?? - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2

?? - Usable to 1E14 Neutrons/cm2

產(chǎn)品屬性

  • 型號:

    FSL234R1

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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