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FTD2114K

Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KVLT1G

Marking：BV；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KVLT3G

Marking：BV；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KWLT1G

Marking：BW；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KWLT3G

Marking：BW；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

GM2114

CMOSPOSITIVEVOLTAGEREGULATOR

Description TheGM2114seriesofpositive,linearregulatorsfeaturelowquiescentcurrent(30uAtyp.)withlowdropoutvoltage,makingthemidealforbatteryapplications. TheseruggeddeviceshavebothThermalShutdown,andCurrentFold-backtopreventdevicefailureunderthe“Worst”ofopera

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GRF2114

BroadbandLNA/LinearDriverTuningRange:0.1–2.7GHz

Features Reference:5V/135mA/830MHz ?Gain:17.9dB ?EvalBoardNF:0.93dB ?IP1dB:7.4dBm ?OP1dB:24.3dBm ?IIP3:22.3dBm ?OIP3:40.2dBm ?FlexibleBiasVoltageandCurrent ?Process:GaAspHEMT Applications ?SmallCellsandCellularRepeaters ?CellularInfrastructure ?

GUERRILLA

Guerrilla RF, Inc.

HAT2114R

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2114RJ

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HDSP2114S

8-Character5x7DotMatrixParallelInputAlphanumericIntelligentDisplay

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

供應商型號品牌批號封裝庫存備注價格
IPS
1728+
TO-252
8500
只做原裝進口,假一罰十
 詢價
I
23+
TO-252
10000
公司只做原裝正品
 詢價
IPS
23+
TO-252
50000
全新原裝正品現貨,支持訂貨
 詢價
I
TO-252
22+
6000
十年配單,只做原裝
 詢價
IPS
SOT-252
68900
原包原標簽100%進口原裝常備現貨!
 詢價
IPS
1932+
TO-252
1610
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IPS
23+
NA/
729
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
IPS
2022+
TO-252
30000
進口原裝現貨供應,原裝 假一罰十
 詢價
IPS
23+24
TO-252
56983
原裝正品,原盤原標,提供BOM一站式配單
 詢價
IPS
2024+
TO-252
188600
全新原廠原裝正品現貨 歡迎咨詢
 詢價
更多FTD2114K供應商 更新時間2025-2-6 15:10:00

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